 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 1.05 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 10N100 12N100 10N100 12N100 Maximum Ratings 1000 1000 20 30 10 12 40 48 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2 4.5 100 TJ = 25C TJ = 125C 250 1 1.20 1.05 V Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l IGSS IDSS R DS(on) VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 nA A mA Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l 10N100 12N100 Pulse test, t 300 s, duty cycle d 2 % l VGS(th) VDS = VGS, ID = 250 A V l VDSS VGS = 0 V, ID = 3 mA l l l l l 91540E(5/96) 1-4 IXTH 10 N100 IXTM 10 N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 12 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 70 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 62 32 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 55 50 50 100 50 170 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W 1 IXTH 12 N100 IXTM 12 N100 TO-247 AD (IXTH) Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10N100 12N100 10N100 12N100 10 12 40 48 1.5 1000 A A A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AA (IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 L 7.93 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 10 N100 IXTM 10 N100 IXTH 12 N100 IXTM 12 N100 Fig. 1 Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 5V TJ = 25C VGS = 10V 7V 6V Fig. 2 Input Admittance 20 18 16 14 12 10 8 6 4 2 0 TJ = 25C ID - Amperes 0 5 10 15 20 ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.5 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.4 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 6A 1.3 1.2 1.1 1.0 0.9 0 5 10 15 20 25 VGS = 10V VGS = 15V 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 20 18 16 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 14 12 10 8 6 4 2 0 -50 1.0 0.9 0.8 0.7 0.6 12N100 10N100 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 10 N100 IXTM 10 N100 IXTH 12 N100 IXTM 12 N100 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 6A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 10 Limited by RDS(on) 100s 1ms 6 5 4 3 2 1 0 0 25 50 75 100 125 150 ID - Amperes VGS - Volts 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 Ciss Fig.10 Source Current vs. Source to Drain Voltage 20 18 16 14 12 10 8 6 4 2 0 0.0 TJ = 125C Capacitance - pF 3500 f = 1MHz VDS = 25V 2500 2000 1500 1000 500 0 0 5 Coss Crss ID - Amperes 3000 TJ = 25C 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
Price & Availability of IXTH10N100
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |